Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode

被引：0

作者：

Ding, Hua-Jun ^{[1
]}

Xue, Zhong-Ying ^{[1
]}

Wei, Xing ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsystem & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

ACTA PHYSICA SINICA | 2022年 / 71卷 / 20期

基金：

中国国家自然科学基金;

关键词：

aluminum; Schottky barrier; germanium; nickel; HEIGHTS;

D O I：

10.7498/aps.71.20220320

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

NiGe/n-Ge Schottky barrier height is modulated by Ni/n-Ge reaction with 1 nm Al as an intermediate layer. The series resistance, barrier height and ideal factor of Schottky diodes are extracted by the forward I-V method, Cheung method and Norde method, respectively. Comparing with Ni/n-Ge SBD, the introduction of 1 nm Al insertion layer between Ni and Ge substrates can effectively reduce the barrier height and maintain stability between 350 degrees C and 450 degrees C.

引用

页数：7

共 31 条

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