Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing

被引：18

作者：

De Silva, Milantha ^{[1
]}

Kawasaki, Teruhisa ^{[2
]}

Miyazaki, Takamichi ^{[3
]}

Koganezawa, Tomoyuki ^{[4
]}

Yasuno, Satoshi ^{[4
]}

Kuroki, Shin-Ichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Res Inst Nanodevices & Bio Syst, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 7398527, Japan

[2] Sumitomo Heavy Ind Ltd, 19 Natsushima Cho, Yokosuka, Kanagawa 2378555, Japan

[3] Tohoku Univ, Sch Engn, Aoba Ku, 6-6-11 Aza Aoba, Sendai, Miyagi 9808579, Japan

[4] SPring 8, Japan Synchrotron Radiat Res Inst JASRI, 1-1-1 Kouto, Sayo, Hyogo 6795198, Japan

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 25期

关键词：

HIGH-TEMPERATURE; MICROSTRUCTURE; SEMICONDUCTOR; TI5SI3;

D O I：

10.1063/1.4987136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Ti-Si-C Ohmic contacts on the 4H-SiC C-face for SiC power devices by pulsed-laser annealing were demonstrated. Titanium (Ti) is one of the carbon-interstitial type metals. In a conventional nickel silicide (NiSi) electrode on SiC, carbon agglomeration at the silicide/SiC interface occurs, and the contact resistance between NiSi and SiC substrates becomes larger. For the carbon agglomeration suppression, a nanosecond non-equilibrium laser annealing was performed, and also Ti was deposited for the formation of both silicide and carbide. As a result, the lowest specific contact resistance of 4.0 x 10(-4) Omega cm(2) was obtained for an Al/Ti-Si-C/SiC structure at a laser power of 2.5 J/cm(2). The Ti-Si-C Ohmic electrode showed TiC and Ti5Si3 crystal phases, and these crystals were epitaxially grown on 4H-SiC at the interface. Published by AIP Publishing.

引用

页数：5

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