The all boron carbide diode neutron detector: Comparison with theory

被引：105

作者：

Caruso, A. N.

Dowben, P. A.

Balkir, S.

Schemm, Nathan

Osberg, Kevin

Fairchild, R. W.

Flores, Oscar Barrios

Balaz, Snjezana

Harken, A. D.

Robertson, B. W.

Brand, J. I.

机构：

[1] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat Res & Nanosci, Brace Lab 116, Lincoln, NE 68588 USA

[2] Univ Nebraska, Dept Phys & Astron, Behlen Lab Phys, Lincoln, NE 68588 USA

[3] Univ Nebraska, Coll Engn, Walter Scott Engn Ctr N245, Lincoln, NE 68588 USA

[4] N Dakota State Univ, Ctr Nanoscale Sci & Engn, Fargo, ND 58102 USA

[5] Univ Nebraska, Dept Elect Engn, Coll Engn, Walter Scott Engn Ctr 237N, Lincoln, NE 68588 USA

[6] Nebraska Wesleyan Univ, Dept Phys & Astron, Lincoln, NE 68504 USA

[7] Univ Nebraska, Coll Engn, Dept Mech Engn, Walter Scott Engn Ctr N124, Lincoln, NE 68588 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 135卷 / 02期

关键词：

boron carbide diodes; neutron detection; pulse counting;

D O I：

10.1016/j.mseb.2006.08.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A boron carbide diode detector, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theory. Small deviations from the model calculations occur due to the detection efficiencies of the B-10 capture products Li plus alpha sum signal differing somewhat from expectation in the thin diodes. The performance of the all boron carbide neutron detector does depart from the behavior of devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector), as is expected. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：129 / 133

页数：5

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