Frequency-domain modeling of semiconductor mode lock lasers

被引：0

作者：

Chow, W. W. ^{[1
]}

Liu, S. ^{[2
]}

Norman, J. C. ^{[2
]}

Duan, J. ^{[3
]}

Grillot, F. ^{[3
,4
]}

Bowers, E. ^{[2
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ Calif Santa Barbara, Mat & Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA

[3] Inst Polytech Paris, Telecom Paris, LTCI, 19 Pl Marguerite Perey, F-91130 Palaiseau, France

[4] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87196 USA

来源：

2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年

关键词：

quantum-dot lasers; mode-locking; laser theory;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A frequency-domain description of semiconductor mode-locked lasers is presented. The approach provides self-consistent accounting of locking mechanism, gain saturation, mode competition and carrier-induced refractive index, in addition to directly connecting mode-locking performance to the bandstructure.

引用

页数：2

共 7 条

[1] A STUDY OF LOCKING PHENOMENA IN OSCILLATORS [J].