Deep level photothermal spectroscopy for characterizing Ni impurities in Si by a temperature dependent piezoelectric photothermal signal

被引：5

作者：

Sato, S ^{[1
]}

Memon, A ^{[1
]}

Fukuyama, A ^{[1
]}

Tanaka, S ^{[1
]}

Ikari, T ^{[1
]}

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2003年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.1519673

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The temperature variation of the piezoelectric photothermal (PPT) signal intensity of n-type Ni-doped Si was measured from 100 to 300 K. We observed one distinctive peak at 150 K in Ni-doped sample. Since no intense peak could be observed for the controlled sample, we consider this 150 K peak is due to Ni impurity. The activation energy, electron capture cross section, photoionization cross section and concentrations for Ni-deep level are obtained by fitting the observed curve to that from the theoretical analysis based on a rate equation for electrons. The best-fitted parameters are well agreed with that obtained by usual deep level transient spectroscopy measurements and isothermal capacitance transient spectroscopy. Additionally, photoionization cross section of Ni-deep level in Si can be obtained by this method. Since no electrodes are necessary in this experimental technique, the PPT measurement for studying the deep level in semiconductor is very useful. (C) 2003 American Institute of Physics.

引用

页码：340 / 342

页数：3

共 5 条

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