Comparison of ESD protection capability of lateral BJT, SCR and Bi-directional SCR for Hi-voltage BiCMOS circuits

被引：28

作者：

Vashchenko, V ^{[1
]}

Concannon, A ^{[1
]}

TerBeek, M ^{[1
]}

Hopper, P ^{[1
]}

机构：

[1] Natl Semicond Corp, Santa Clara, CA 95052 USA

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Triggering structures BJT, SCR and bi-directional SCR for high voltage BiCMOS process on-chip ESD protection have been developed and analyzed using physical process and device simulation and pulse measurements. A ten-fold, increase in the protection levels compared to the reference BJT structures have been demonstrated using a cylindrical lateral SCR and bidirectional SCR.

引用

页码：181 / 184

页数：4

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