Enhanced flux pinning in Bi-2212 single crystals by planar defects introduced via Ti-substitution

被引：28
|
作者：
Li, TW
Drost, RJ
Kes, PH
Traeholt, C
Zandbergen, HW
Hien, NT
Menovsky, AA
Franse, JJM
机构：
[1] LEIDEN UNIV, KAMERLINGH ONNES LAB, NL-2300 RA LEIDEN, NETHERLANDS
[2] DELFT UNIV TECHNOL, MAT SCI LAB, NL-2628 AL DELFT, NETHERLANDS
[3] UNIV AMSTERDAM, VAN DER WAALS ZEEMAN LAB, NL-1018 XE AMSTERDAM, NETHERLANDS
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1997年 / 274卷 / 3-4期
关键词：
critical current density; flux pinning; substitution effects; defect structure; single crystal growth;
D O I：
10.1016/S0921-4534(96)00699-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ti-doped Bi-2212 single crystals were grown by the travelling solvent floating zone technique. Concentrations of about 1 at% and 2 at% (with respect to Cu) were shown to be incorporated in the structure which leads to lowering of T-c to about 73 K from 85 K. High resolution microscopy revealed high densities of planar defects parallel to the a,c-planes. The flux pinning properties at elevated temperatures are significantly improved with respect to undoped single crystals.
引用
收藏
页码：197 / 203
页数：7
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