Graphene is emerging as a promising material for photonic applications owing to its unique optoelectronic properties. Graphene supports tunable, long-lived and extremely confined plasmons that have great potential for applications such as biosensing and optical communications. However, in order to excite plasmonic resonances in graphene, this material requires a high doping level, which is challenging to achieve without degrading carrier mobility and stability. Here, we demonstrate that the infrared plasmonic response of a graphene multilayer stack is analogous to that of a highly doped single layer of graphene, preserving mobility and supporting plasmonic resonances with higher oscillator strength than previously explored single-layer devices. Particularly, we find that the optically equivalent carrier density in multilayer graphene is larger than the sum of those in the individual layers. Furthermore, electrostatic biasing in multilayer graphene is enhanced with respect to single layer due to the redistribution of carriers over different layers, thus extending the spectral tuning range of the plasmonic structure. The superior effective doping and improved tunability of multilayer graphene stacks should enable a plethora of future infrared plasmonic devices with high optical performance and wide tunability.
机构:
Vietnam Natl Univ, Ho Chi Minh City, Vietnam
Univ Sci, 227 Nguyen Cu St, Ho Chi Minh City, VietnamAn Giang Univ, 18 Ung Khiem St, An Giang, Vietnam
Khanh, Nguyen Quoc
Linh, Dang Khanh
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HCMC Univ Educ, 280 Duong Vuong,5th Dist, Ho Chi Minh City, VietnamAn Giang Univ, 18 Ung Khiem St, An Giang, Vietnam
机构:An Giang Univ VNU HCM, 18 Ung Van Khiem St, Long Xuyen City, An Giang Provin, Vietnam
Phuong, Dong Thi Kim
Men, Nguyen Van
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An Giang Univ VNU HCM, 18 Ung Van Khiem St, Long Xuyen City, An Giang Provin, VietnamAn Giang Univ VNU HCM, 18 Ung Van Khiem St, Long Xuyen City, An Giang Provin, Vietnam
Men, Nguyen Van
INTERNATIONAL JOURNAL OF MODERN PHYSICS B,
2024,
38
(18):
机构:
Korea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Won, Sejeong
Hwangbo, Yun
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Korea Inst Machinery & Mat KIMM, Nanoconvergence Mech Syst Res Div, Dept Nanomech, Taejon 305343, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Hwangbo, Yun
Lee, Seoung-Ki
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Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Lee, Seoung-Ki
Kim, Kyung-Shik
论文数: 0引用数: 0
h-index: 0
机构:
Korea Inst Machinery & Mat KIMM, Nanoconvergence Mech Syst Res Div, Dept Nanomech, Taejon 305343, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Kim, Kyung-Shik
Kim, Kwang-Seop
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Korea Inst Machinery & Mat KIMM, Nanoconvergence Mech Syst Res Div, Dept Nanomech, Taejon 305343, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Kim, Kwang-Seop
Lee, Seung-Mo
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h-index: 0
机构:
Korea Inst Machinery & Mat KIMM, Nanoconvergence Mech Syst Res Div, Dept Nanomech, Taejon 305343, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Lee, Seung-Mo
Lee, Hak-Joo
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机构:
Korea Inst Machinery & Mat KIMM, Nanoconvergence Mech Syst Res Div, Dept Nanomech, Taejon 305343, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Lee, Hak-Joo
Ahn, Jong-Hyun
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机构:
Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Ahn, Jong-Hyun
Kim, Jae-Hyun
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h-index: 0
机构:
Korea Inst Machinery & Mat KIMM, Nanoconvergence Mech Syst Res Div, Dept Nanomech, Taejon 305343, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea
Kim, Jae-Hyun
Lee, Soon-Bok
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机构:
Korea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mech Engn, Taejon 305701, South Korea