Mechanisms of the ultrafast magnetization switching in bistable amorphous microwires
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作者:
Ipatov, M.
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Univ Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, SpainUniv Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
Ipatov, M.
[1
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Zhukova, V.
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Univ Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, SpainUniv Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
Zhukova, V.
[1
]
Zvezdin, A. K.
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Univ Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, RussiaUniv Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
Zvezdin, A. K.
[1
,2
]
Zhukov, A.
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Univ Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
TAMAG Ibr SL, San Sebastian 20009, SpainUniv Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
Zhukov, A.
[1
,3
]
机构:
[1] Univ Pais Vasco UPV EHU, Dept Mat Phys, Fac Chem, San Sebastian 20018, Spain
[2] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
Two magnetization reversal regimes were found in magnetically bistable Fe-rich microwires. The first one, exhibiting an almost linear dependence of the domain wall velocity v on magnetic field H reaching 1.7 km/s, is related to single DW propagation. The second essentially nonlinear regime is observed when H exceeds some critical magnetic field, H-N, determined by the microwire in homogeneities. At H > H-N, new reverse domains can be nucleated, and consequently a tandem remagnetization mechanism can be realized. Ultrafast magnetization switching through additional nucleation centers created artificially can be applied in spintronic devices for enhancing their performance. (C) 2009 American Institute of Physics. [doi:10.1063/1.3256121]