Dependence of layer thickness on magnetism and electrical conduction in ferromagnetic (In,Mn)As/GaSb heterostructures

被引：0

作者：

Nose, H. ^{[1
]}

Sugahara, S. ^{[1
]}

Munekata, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268502, Japan

来源：

NARROW GAP SEMICONDUCTORS 2007 | 2008年 / 119卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Relatively thick, ferromagnetic (In,Mn)As layers of up to around 150 nm with Curie temperature of T-c = 35 K were prepared successfully by molecular beam epitaxy. Dependencies of (In,Mn)As and GaSb layer thicknesses on electrical conduction in the (In,Mn)As/GaSb were studied experimentally to discuss the evidence of hole transfer from p-(In,Mn)As to adjacent GaSb.

引用

页码：23 / 26

页数：4

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