Graphene field-effect transistors (vol 44, 313001, 2011)

被引：15
|
作者：
Reddy, Dharmendar
Register, Leonard F.
Carpenter, Gary D.
Banerjee, Sanjay K.
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 01期
关键词：
D O I：
10.1088/0022-3727/45/1/019501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
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