Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique

被引：8

作者：

Ganesh, R. Bairava ^{[1
,2
]}

Matsuo, Hitoshi ^{[1
]}

Kangawa, Yoshihiro ^{[1
,3
]}

Arafune, Koji ^{[4
]}

Ohshita, Yoshio ^{[4
]}

Yamaguchi, Masafumi ^{[4
]}

Kakimoto, Koichi ^{[1
,3
]}

机构：

[1] Kyushu Univ, RIAM, Grad Sch Engn, Fukuoka 8168580, Japan

[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India

[3] Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, Japan

[4] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

CRYSTAL GROWTH & DESIGN | 2008年 / 8卷 / 07期

关键词：

D O I：

10.1021/cg800160g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Employing the accelerated crucible rotation technique, we grew multicrystalline silicon by the directional solidification process. The distribution of carbon concentration determined by Fourier transform infrared spectroscopy demonstrated that application of accelerated crucible rotation homogenized the carbon concentration in the grown ingot. Attempts were made to explain the effect of crucible rotation on homogenization of carbon concentration in terms of segregation phenomena. Moreover, growth striations induced by the crucible rotation were observed in the axial direction of the ingot.

引用

页码：2525 / 2527

页数：3

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