Structural and optical properties of stacked self-assembled InAs/InGaAs quantum dots on graded Si1-xGex/Si substrate

被引：11

作者：

Tanoto, H. ^{[1
]}

Yoon, S. F. ^{[1
,2
]}

Ngo, C. Y. ^{[1
]}

Loke, W. K. ^{[1
]}

Dohrman, C. ^{[3
]}

Fitzgerald, E. A. ^{[3
,4
]}

Narayanan, B. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Singapore MIT Alliance, Singapore 637460, Singapore

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Singapore MIT Alliance, Cambridge, MA 02139 USA

[5] Inst Microelect, Singapore 117685, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 21期

关键词：

D O I：

10.1063/1.2931699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of InAs monolayer coverage on the structural and optical characteristics of stacked InAs quantum dot (QD) layers on graded Si-1 (-) Ge-x(x)/Si substrate. No preferential InAs QDs nucleation was observed along the cross-hatched lines on the graded Si-1 (-) Ge-x(x)/Si substrate. Employing alternate-beam molecular beam epitaxy, InAs QDs with areal density as high as 7x10(10) cm(-2) was achieved. Temperature dependence of the InAs QDs optical properties is discussed. The InAs QDs show room-temperature photoluminescence at 1.3 mu m with full width at half-maximum of 65 nm. The results are significant for potential realization of III-V QD devices on silicon-based platforms. (c) 2008 American Institute of Physics.

引用

页数：3

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