Pressure, temperature, and thickness dependence of transmittance in a 1D superconductor-semiconductor photonic crystal

Using the transfer matrix method, we study the transmittance of 1D photonic crystals made of alternated layers of a semiconductor (GaAs) and a high-T-c superconductor (HgBa2Ca2Cu3O8+delta) under the effects of temperature, applied hydrostatic pressure, and thickness of the layers. The frequency-dependent dispersion formula according to the two-fluid model was adopted to describe the optical response of the superconducting system. We found that increasing the superconductor (semiconductor) layer thickness results in a shift to higher (lower) values of the transmittance cutoff frequency. Additionally, this cutoff frequency is shifted to lower values with the temperature increase. Furthermore, we found that the width of the photonic bandgaps varies with the applied pressure. The most notorious variation is presented near the 17 THz region, where a new gap appears with the increase in pressure. We hope this work may be taken into consideration for the development of new perspectives in the design of new optical devices. Published by AIP Publishing.