InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates

被引：10

作者：

Li, Yajie ^{[1
,2
,3
]}

Wang, Mengqi ^{[1
,3
]}

Zhou, Xuliang ^{[1
,3
]}

Wang, Pengfei ^{[1
,2
,3
]}

Yang, Wenyu ^{[1
,2
,3
]}

Meng, Fangyuan ^{[1
,2
,3
]}

Luo, Guangzhen ^{[1
,2
,3
]}

Yu, Hongyan ^{[1
,2
,3
]}

Pan, Jiaoqing ^{[1
,2
,3
]}

Wang, Wei ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 02期

基金：

中国国家自然科学基金;

关键词：

III-V; LASER; SI;

D O I：

10.1364/OE.27.000494

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

InGaAs/InP multi-quantum-well nanowires were directly grown on the v-groove-patterned SOI substrate by metal organic chemical vapor deposition. The surface morphology of the nanowires. the thickness of the quantum wells, and the photoluminescence spectra were characterized by scanning electron microscope, transmission electron microscopy, and micro-photoluminescence. respectively. We found in the experiments that the work of removing part of top Si on both sides of the nanowire to further reduce the optical leakage loss could be completed perfectly without complicated processes, such as a lithography process. Numerical simulations showed that the III-V nanowire was able to support an extraordinarily stable optical guided mode with a lower optical leakage loss of 0.21 cm when etching away part of top Si on both sides of the nanowire, and the optical confinement factor of the multi-quantumwell active region was about 8.8%. This approach opens up a way for monolithic photonic integration of III-V compound semiconductors on Si to occur. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：494 / 503

页数：10

共 29 条

[1] Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility [J].