Morpho-structural and optical characterization of silicon nanowires intended for microarray substrates

被引：0
|
作者：
Popescu, M. A. [1 ]
Mihalache, I [1 ]
Romanitan, C. [1 ]
Popescu, M. C. [2 ]
Gogianu, L. [1 ]
Simion, M. [1 ]
机构：
[1] IMT Bucharest, Natl Inst Res & Dev Microtechnol, 126A Erou Iancu Nicolae St, Bucharest 077190, Romania
[2] SC Ronexprim SRL, 5 Cotiturii St, Bucharest 010885, Romania
来源：
2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2021年
关键词：
silicon nanowires; X-ray diffraction; scanning electron microscopy; time-resolved spectroscopy; photoluminescence; microarray; FABRICATION;
D O I：
10.1109/CAS52836.2021.9604193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
One-step metal assisted chemical etching (1-MACE) of silicon (Si) resulted in vertical silicon nanowires (SiNWs). Field emission scanning electron microscopy (FE-SEM) revealed SiNWs with lengths around 6, 8 and 10 mu m. High resolution X-Ray Diffraction (XRD) showed the formation of monocrystalline Si (001). Photoluminescence measurements disclosed a broad spectral band on one of the samples with four emission peaks.
引用
收藏
页码：265 / 268
页数：4
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