A study of emission power and spectrum of LT-GaAs based THz photoconductive antennas

被引：4
|
作者：
Savinov, S. A. [2 ]
Mityagin, Yu. A. [1 ,2 ]
Chistyakov, A. A. [1 ]
Kozlovsky, K. I. [1 ]
Kuzishchin, Yu. A. [1 ]
Krivenkov, V. A. [1 ]
Egorkin, V. I. [3 ]
Kazakov, I. P. [2 ]
机构：
[1] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Kashirskoye Shosse 31, Moscow 115409, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[3] Natl Res Univ Elect Technol MIET, Moscow 124498, Russia
来源：
4TH INTERNATIONAL CONFERENCE OF PHOTONICS AND INFORMATION OPTICS, PHIO 2015 | 2015年 / 73卷
关键词：
low-temperature gallium arsenide; photoexcited carriers; photoconductive antennas; terahertz radiation; LOW-TEMPERATURE; CARRIER LIFETIME; TERAHERTZ;
D O I：
10.1016/j.phpro.2015.09.121
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Emission spectra of LT-GaAs photoconductive antennas based on epitaxial films of "low-temperature" gallium arsenide (LT-GaAs) are measured in the terahertz frequency region by the Fourier transform spectroscopy. (C) 2015 The Authors. Published by Elsevier B.V.
引用
收藏
页码：54 / 58
页数：5
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