Chemical vapor deposition of hydrogen-free silicon-dioxide films

被引：6

作者：

Uchida, Y ^{[1
]}

Takei, S ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

CVD; tertiary-alkyl-amine; tetra-iso-cyanate-silane; silicon-dioxide; insulating thin film; chemical vapor deposition;

D O I：

10.1143/JJAP.36.1509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new source gas mixture of Si(NCO)(4) and N(CH3)(3) has been investigated for low-temperature chemical vapor deposition of silicon dioxide. Hydrogen-free films have been successfully deposited at 200 degrees C for the first time. Evaluated results are also presented for deposition characteristics and deposited film properties. The breakdown-field strength and low-field resistivity were as high as 5.9 MV/cm and 6 x 10(16) Ohm cm, respectively, for the as-deposited film.

引用

页码：1509 / 1512

页数：4

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