Effects of annealing to tunnel junction stability

被引：0

作者：

Koppinen, P. J. ^{[1
]}

Vaisto, L. M. ^{[1
]}

Maasilta, I. J. ^{[1
]}

机构：

[1] Univ Jyvaskyla, Dept Phys, Nanosci Ctr, POB 35, FIN-40014 Jyvaskyla, Finland

来源：

LOW TEMPERATURE PHYSICS, PTS A AND B | 2006年 / 850卷

基金：

芬兰科学院;

关键词：

tunnel junctions; annealing; single electron devices;

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

We have studied how annealing affects the stability of submicron sized Al-A1O(x)-Al tunnel junctions. Samples were annealed in temperatures ranging from 200 degrees C to 500 degrees C in a vacuum chamber. Characterization of the samples at liquid helium temperature shows a change in the charging energy of the junctions after annealing. More significantly, we have observed a stepwise increase and a complete stabilization of the tunneling resistance after an annealing cycle in high temperatures. In addition to annealing, plasma cleaning of the substrate before metal deposition also reduces the rate of aging of the junctions.

引用

页码：1639 / +

页数：2

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