Ion implantation processing and related effects in SiC

被引：6
作者：
Svensson, B. G.
Hallen, A.
Wong-Leung, J.
Janson, M. S.
Linnarsson, M. K.
Kuznetsov, A. Yu.
Alfieri, G.
Grossner, U.
Monakhov, E. V.
Nielsen, H. K.
Jagadish, C.
Grillenberger, J.
机构：
[1] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
[2] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway
[3] Royal Inst Technol, SE-16440 Kista, Sweden
[4] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[5] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
来源：
SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2 | 2006年 / 527-529卷
关键词：
implantation; profile simulation; doping; ion flux; dynamic annealing;
D O I：
10.4028/www.scientific.net/MSF.527-529.781
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p(+)-doped layers, and deactivation of N donors by ion-induced defects.
引用
收藏
页码：781 / 786
页数：6
相关论文
共 32 条
  • [1] Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers
    Åberg, D
    Hallén, A
    Pellegrino, P
    Svensson, BG
    [J]. APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 263 - 267
  • [2] Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n-type 4H silicon carbide -: art. no. 043518
    Alfieri, G
    Monakhov, EV
    Svensson, BG
    Linnarsson, MK
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
  • [3] REPRESENTATION OF ION-IMPLANTATION PROFILES BY PEARSON FREQUENCY-DISTRIBUTION CURVES
    ASHWORTH, DG
    OVEN, R
    MUNDIN, B
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1990, 23 (07) : 870 - 876
  • [4] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS
    BIERSACK, JP
    HAGGMARK, LG
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2): : 257 - 269
  • [5] The nature and diffusion of intrinsic point defects in SiC
    Bockstedte, M
    Heid, M
    Mattausch, A
    Pankratov, O
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 471 - 476
  • [6] Phosphorus implantation into 4H-silicon carbide
    Capano, MA
    Santhakumar, R
    Venugopal, R
    Melloch, MR
    Cooper, JA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (02) : 210 - 214
  • [7] Deák P, 2002, MATER SCI FORUM, V433-4, P523, DOI 10.4028/www.scientific.net/MSF.433-436.523
  • [8] Formation and annealing of nitrogen-related complexes in SiC
    Gerstmann, U
    Rauls, E
    Frauenheim, T
    Overhof, H
    [J]. PHYSICAL REVIEW B, 2003, 67 (20)
  • [9] Doping in cubic silicon-carbide
    Gubanov, VA
    Fong, CY
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (01) : 88 - 90
  • [10] p-type doping of SiC by high dose Al implantation - Problems and progress
    Heera, V
    Panknin, D
    Skorupa, W
    [J]. APPLIED SURFACE SCIENCE, 2001, 184 (1-4) : 307 - 316
1234