Electrical properties of Cu doped p-ZnTe nanowires

被引：59
作者：
Huo, H. B.
Dai, L. [1 ]
Liu, C.
You, L. P.
Yang, W. Q.
Ma, R. M.
Ran, G. Z.
Qin, G. G.
机构：
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[3] Peking Univ, Electron Microscopy Lab, Beijing 100871, Peoples R China
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 24期
关键词：
D O I：
10.1088/0957-4484/17/24/002
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Single crystalline zincblende p-ZnTe nanowires (NWs) were synthesized via the vapour phase transport method. Based on either as-grown or Cu doped ZnTe NWs, single NW field effect transistors were fabricated and they were used to study the electrical properties of ZnTe NWs. Electrical transport measurements show that the as-grown ZnTe NWs are of p-type and very high resistivity. After 30 min immersion in Cu(NO3)(2) solution, their conductivity can be increased by about three orders of magnitude. The hole concentrations of the p-type ZnTe nanowires could be controlled in a range from 7.0 x 10(17) to 3.5 x 10(18) cm(-3) by changing the immersion duration. The doped p-type ZnTe NWs may have potential applications in nanoscale electronic and optoelectronic devices.
引用
收藏
页码：5912 / 5915
页数：4
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