Multiband effects on β-FeSe single crystals

被引：59

作者：

Lei, Hechang ^{[1
]}

Graf, D. ^{[2
]}

Hu, Rongwei ^{[1
]}

Ryu, Hyejin ^{[1
,3
]}

Choi, E. S. ^{[2
]}

Tozer, S. W. ^{[2
]}

Petrovic, C. ^{[1
,3
]}

机构：

[1] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA

[2] Florida State Univ, NHMFL Phys, Tallahassee, FL 32310 USA

[3] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 09期

关键词：

SUPERCONDUCTIVITY; SPIN; COEXISTENCE; FIELDS;

D O I：

10.1103/PhysRevB.85.094515

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the upper critical fields mu H-0(c2)(T) and Hall effect in beta-FeSe single crystals. The mu H-0(c2)(T) increases as the temperature is lowered for fields applied parallel and perpendicular to (101), the natural growth facet of the crystal. The mu(0)Hc(2)(T) for both field directions and the anisotropy at lowtemperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate mu H-0(c2)(T) and electronic transport in the normal state.

引用

页数：5

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