Development of Corrosion-Resistant Pressure Sensor with Semiconductor Strain Sensor

In automotive and industrial fields, pressure sensors are a key component for precisely controlling the mechanical systems. Conventional micro electro mechanical system (MEMS)-based pressure sensors have an advantage in noise resistance, because both strain gauges and control circuits are integrated in one chip. However, the MEMS-based pressure sensors are generally fabricated on an Si substrate, and have a low stability against various active gases. Thus, we have newly proposed a pressure sensor which consists of an Si-based strain sensor set on a stainless steel diaphragm with a high stability against the active gases. The key technology is that a Koval plate is inserted between the strain sensor and the stainless steel diaphragm, for preventing the breakage or the delamination of the strain sensor at the bonding interface due to a difference in thermal expansion. Structure of the sensor including the shape and the size of Koval plate and the assembly position of the strain sensor were designed using structural simulation and experiments. Eventually, the 2.8 mm wide and 0.17 mm thick Koval beam was bridged on the stainless steel diaphragm for efficiently transmitting the diaphragm deformation to the strain sensor. The strain sensor was assembled at the edge of Koval beam with a glass bonding technique. Consequently, the developed pressure sensor has achieved a small dispersion of less than 1% F. S. in a temperature range from 0 degrees C to 85 degrees C. C. 2018 Wiley Periodicals, Inc. Electr Eng Jpn, 203( 2): 58- 65, 2018; Published online inWiley Online Library ( wileyonlinelibrary. com). DOI 10.1002/ eej. 23069