Lateral and longitudinal mode pattern of broad ridge 405 nm (Al, In)GaN laser diodes

被引：15

作者：

Braun, H. ^{[1
]}

Solowan, H. -M. ^{[1
]}

Scholz, D. ^{[1
]}

Meyer, T. ^{[1
]}

Schwarz, U. T. ^{[1
]}

Brueninghoff, S. ^{[2
]}

Lell, A. ^{[2
]}

Strauss, U. ^{[2
]}

机构：

[1] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

[2] Osram Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2902505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lateral mode profile of pulsed broad ridge 405 nm (Al, In)GaN laser diodes grown on GaN and SiC substrates, respectively, is investigated by temporal and spectral resolved scanning near-field optical microscopy. During the first microsecond of the pulse, we observe changes both in the spatial mode profile and in the spectral regime caused by thermal and carrier induced modification of the waveguide refractive index, before stable filaments build up. In quasi-cw operation, a correlation between the lateral mode profile and the corresponding spatial resolved longitudinal mode pattern can be found. The results show that different filaments have different effective refractive indices and thus build up separate longitudinal mode combs. (C) 2008 American Institute of Physics.

引用

页数：3

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