Effects of As2 versus As4 on InAs/GaSb heterostructures:: As-for-Sb exchange and film stability

被引:38
作者
Nosho, BZ [1 ]
Bennett, BR
Whitman, LJ
Goldenberg, M
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] SFA Inc, Largo, MD 20774 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期
关键词
D O I
10.1116/1.1386377
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have used cross-sectional scanning tunneling microscopy and x-ray diffraction to characterize and compare the effects of As-2 versus As-4 on the growth of InAs/GaSb heterostructures by molecular beam epitaxy. When GaSb surfaces are exposed to an As-2 flux, the As exchanges with the surface Sb in an anion exchange reaction that creates layers of GaAs. In contrast, when GaSb surfaces are exposed to As-4 fluxes, there is no evidence of the As-for-Sb exchange reaction. When comparing the use of As-2 and As-4 in periodic InAs/GaSb superlattices, the differences in the As incorporation rate into GaSb is further evident in x-ray diffraction spectra as a shift in the average lattice constant of the epilayer due to GaAs bond formation. Although inhibiting the exchange reaction would be useful in the minimization of the cross incorporation of As in the GaSb layers, the growth of InAs/GaSb heterostructures using As-4 can be complicated by the introduction of film instabilities that have not been observed in growths using As-2.
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收藏
页码:1626 / 1630
页数:5
相关论文
共 33 条
[1]   Structure of III-Sb(001) growth surfaces: The role of heterodimers [J].
Barvosa-Carter, W ;
Bracker, AS ;
Culbertson, JC ;
Nosho, BZ ;
Shanabrook, BV ;
Whitman, LJ ;
Kim, H ;
Modine, NA ;
Kaxiras, E .
PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4649-4652
[2]   CONTROL OF INTERFACE STOICHIOMETRY IN INAS/GASB SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].
BENNETT, BR ;
SHANABROOK, BV ;
WAGNER, RJ ;
DAVIS, JL ;
WATERMAN, JR .
APPLIED PHYSICS LETTERS, 1993, 63 (07) :949-951
[3]   INTERFACE CONTROL IN INAS/ALSB SUPERLATTICES [J].
BENNETT, BR ;
SHANABROOK, BV ;
GLASER, ER .
APPLIED PHYSICS LETTERS, 1994, 65 (05) :598-600
[4]   AlSb/InAs HEMT's for low-voltage, high-speed applications [J].
Boos, JB ;
Kruppa, W ;
Bennett, BR ;
Park, D ;
Kirchoefer, SW ;
Bass, R ;
Dietrich, HB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1869-1875
[5]   Surface reconstruction phase diagrams for InAs, AlSb, and GaSb [J].
Bracker, AS ;
Yang, MJ ;
Bennett, BR ;
Culbertson, JC ;
Moore, WJ .
JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) :384-392
[6]   EFFECTS OF THE INTERFACE BONDING TYPE ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF INAS-ALSB QUANTUM-WELLS [J].
BRAR, B ;
IBBETSON, J ;
KROEMER, H ;
ENGLISH, JH .
APPLIED PHYSICS LETTERS, 1994, 64 (25) :3392-3394
[7]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF EXCHANGE-REACTION DYNAMICS ON INAS SURFACES [J].
COLLINS, DA ;
WANG, MW ;
GRANT, RW ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1125-1128
[8]   High performance InAs/Ga1-xInxSb superlattice infrared photodiodes [J].
Fuchs, F ;
Weimer, U ;
Pletschen, W ;
Schmitz, J ;
Ahlswede, E ;
Walther, M ;
Wagner, J ;
Koidl, P .
APPLIED PHYSICS LETTERS, 1997, 71 (22) :3251-3253
[9]   Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers [J].
Harper, J ;
Weimer, M ;
Zhang, D ;
Lin, CH ;
Pei, SS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1389-1394
[10]   DIRECT IMAGING OF SURFACE CUSP EVOLUTION DURING STRAINED-LAYER EPITAXY AND IMPLICATIONS FOR STRAIN RELAXATION [J].
JESSON, DE ;
PENNYCOOK, SJ ;
BARIBEAU, JM ;
HOUGHTON, DC .
PHYSICAL REVIEW LETTERS, 1993, 71 (11) :1744-1747