Optical characterization of excess carrier lifetime and surface recombination in 4H/6H-SiC

被引:65
作者
Galeckas, A
Linnros, J
Frischholz, M
Grivickas, V
机构
[1] Royal Inst Technol, Dept Elect, SE-16440 Stockholm, Sweden
[2] Ind Microelect Ctr, SE-16421 Kista, Sweden
[3] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2054 Vilnius, Lithuania
关键词
D O I
10.1063/1.1385588
中图分类号
O59 [应用物理学];
学科分类号
摘要
The high-injection lifetime and surface recombination parameters have been investigated in as-grown 4H and 6H-SiC epilayers subjected to various process treatments. A depth-resolved optical transient absorption technique was utilized to evaluate the influence of film thickness and surface treatment on carrier lifetime. We demonstrate that besides polishing and ion implantation, both natural and thermal oxidation may also result in lifetime reduction due to enhanced surface losses. Moreover, a long-term stability test has revealed a substantial degradation of lifetime characteristics, consistent with a spontaneous surface oxidation and slow relaxation of SiO2/SiC interface states. We show that for common film thickness < 100 mum, the effective lifetime is dominated by surface leakage, which is found, generally, to be higher in 4H compared to 6H-SiC. (C) 2001 American Institute of Physics.
引用
收藏
页码:365 / 367
页数:3
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