GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

被引：11

作者：

Richter, M. ^{[1
]}

Rossel, C. ^{[1
]}

Webb, D. J. ^{[1
]}

Topuria, T. ^{[2
]}

Gerl, C. ^{[1
]}

Sousa, M. ^{[1
]}

Marchiori, C. ^{[1
]}

Caimi, D. ^{[1
]}

Siegwart, H. ^{[1
]}

Rice, P. M. ^{[2
]}

Fompeyrine, J. ^{[1
]}

机构：

[1] IBM Res, CH-8803 Ruschlikon, Switzerland

[2] IBM Res, San Jose, CA USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting germanium; Semiconducting silicon; MOS capacitors; Roughening; SURFACE; SILICON; LAYERS;

D O I：

10.1016/j.jcrysgro.2010.12.002

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For heterogeneous integration of III-V compound materials on 200 mm Si wafers, we present a complete in-situ molecular beam epitaxy (MBE) process from a Ge strain compensating buffer on Si to GaAs heteroepitaxy. The whole growth process, including high-k gate oxide deposition, is performed in a 200 mm MBE cluster tool. Thin (<= 0.3 mu m), temperature-graded Ge buffers are investigated and the influence of the substrate temperature during Ge nucleation and anneals is studied. Using such a buffer, GaAs was grown on 200 mm Si wafers and characterized structurally and electrically using MOS capacitors. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：387 / 392

页数：6

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