Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization

被引:20
作者
Kim, Jongchan [1 ]
Huong, Chu Thi Thu [1 ]
Van Long, Nguyen [1 ]
Yoon, Minho [1 ]
Kim, Min Jae [2 ]
Jeong, Jae Kyeong [2 ]
Choi, Sungju [3 ]
Kim, Dae Hwan [3 ]
Lee, Chi Ho [4 ]
Lee, Sang Uck [4 ]
Sung, Myung Mo [1 ]
机构
[1] Hanyang Univ, Dept Chem, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[3] Kookmin Univ, C ICT Res Ctr ERC, Sch Elect Engn, Seoul 02707, South Korea
[4] Hanyang Univ, Dept Appl Chem, Ansan 15588, South Korea
关键词
hybrid superlattices; complementary; multiple channels; mutual stabilization; THIN-FILM TRANSISTORS; CONDUCTIVITY; FABRICATION;
D O I
10.1021/acs.nanolett.0c00859
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An organic-inorganic hybrid superlattice with near perfect synergistic integration of organic and inorganic constituents was developed to produce properties vastly superior to those of either moiety alone. The complementary hybrid superlattice is composed of multiple quantum wells of 4-mercaptophenol organic monolayers and amorphous ZnO nanolayers. Within the superlattice, multichannel formation was demonstrated at the organic-inorganic interfaces to produce an excellent-performance field effect transistor exhibiting outstanding field-effect mobility with band-like transport and steep subthreshold swing. Furthermore, mutual stabilizations between organic monolayers and ZnO effectively reduced the performance degradation notorious in exclusively organic and ZnO transistors.
引用
收藏
页码:4864 / 4871
页数:8
相关论文
共 49 条
[1]   Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors [J].
Ahn, Cheol Hyoun ;
Senthil, Karuppanan ;
Cho, Hyung Koun ;
Lee, Sang Yeol .
SCIENTIFIC REPORTS, 2013, 3
[2]  
Brenner TM, 2016, NAT REV MATER, V1, DOI 10.1038/natrevmats.2015.7
[3]   High Performance of a-IZTO TFT by Purification of the Semiconductor Oxide Precursor [J].
Bukke, Ravindra Naik ;
Mude, Narendra Naik ;
Saha, Jewel Kumer ;
Jang, Jin .
ADVANCED MATERIALS INTERFACES, 2019, 6 (13)
[4]   Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates [J].
Chan, Mei Yin ;
Komatsu, Katsuyoshi ;
Li, Song-Lin ;
Xu, Yong ;
Darmawan, Peter ;
Kuramochi, Hiromi ;
Nakaharai, Shu ;
Aparecido-Ferreira, Alex ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Tsukagoshi, Kazuhito .
NANOSCALE, 2013, 5 (20) :9572-9576
[5]   Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition [J].
Chen, Xue ;
Zhang, Guozhen ;
Wan, Jiaxian ;
Guo, Tao ;
Li, Lei ;
Yang, Yanpeng ;
Wu, Hao ;
Liu, Chang .
ADVANCED ELECTRONIC MATERIALS, 2019, 5 (02)
[6]   Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors [J].
Chen, Yao ;
Huang, Wei ;
Sangwan, Vinod K. ;
Wang, Binghao ;
Zeng, Li ;
Wang, Gang ;
Huang, Yan ;
Lu, Zhiyun ;
Bedzyk, Michael J. ;
Hersam, Mark C. ;
Marks, Tobin J. ;
Facchetti, Antonio .
ADVANCED MATERIALS, 2019, 31 (04)
[7]  
Chhowalla M, 2016, NAT REV MATER, V1, DOI [10.1038/natrevmats.2016.52, 10.1038/natrevmats2016.52]
[8]   High-Performance Two-Dimensional Polydiacetylene with a Hybrid Inorganic-Organic Structure [J].
Cho, Sangho ;
Han, Gibok ;
Kim, Kwan ;
Sung, Myung M. .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2011, 50 (12) :2742-2746
[9]   Accurate Extraction of Charge Carrier Mobility in 4-Probe Field-Effect Transistors [J].
Choi, Hyun Ho ;
Rodionov, Yaroslav I. ;
Paterson, Alexandra F. ;
Panidi, Julianna ;
Saranin, Danila ;
Kharlamov, Nikolai ;
Didenko, Sergei I. ;
Anthopoulos, Thomas D. ;
Cho, Kilwon ;
Podzorov, Vitaly .
ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (26)
[10]   Coexistence of ferromagnetism and metallic conductivity in a molecule-based layered compound [J].
Coronado, E ;
Galán-Mascarós, JR ;
Gómez-García, CJ ;
Laukhin, V .
NATURE, 2000, 408 (6811) :447-449