Evolution of the microstructure in titanium dioxide films during chemical vapor deposition

被引：6

作者：

Baryshnikova, Marina ^{[1
]}

Filatov, Leonid ^{[1
]}

Mishin, Maxim ^{[1
]}

Uvarov, Andrey ^{[1
]}

Kondrateva, Anastasia ^{[1
]}

Alexandrov, Sergey ^{[1
]}

机构：

[1] St Petersburg Polytech Univ, Dept Phys Chem & Technol Microsyst Devices, St Petersburg 195251, Russia

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 07期

关键词：

CVD; microstructure; non-stationary growth; titanium dioxide; TIO2; THIN-FILMS; PRECURSOR; GROWTH; RUTILE; MOCVD;

D O I：

10.1002/pssa.201532300

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical vapor deposition (CVD) provides fabrication of high purity conformal layers of titanium dioxide with different structure for various applications. In this work CVD of titania layers from titanium tetraisopropoxide (TTIP) and oxygen at 1 kPa and in the substrate temperature range T-s = 300-500 degrees C was studied. It was found that growth of TiO2 is a nonstationary process. Two periods of time characterized by different deposition rates were observed. Formation of amorphous TiO2 occurs at the initial period of the deposition process whereas polycrystalline titania with anatase crystal structure is deposited at the second period. Substrate temperature determines degree of crystallinity, texture, and microstructure of the deposited titania layers. (C) 2015 WILEY - VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1533 / 1538

页数：6

共 30 条

[1] Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes [J].