Floating electrode transistor based on purified semiconducting carbon nanotubes for high source-drain voltage operation

被引：7

作者：

Lee, Joohyung ^{[1
]}

Lee, Hyungwoo ^{[1
]}

Kim, Taekyeong ^{[1
]}

Jin, Hye Jun ^{[1
]}

Shin, Juyeon ^{[1
]}

Shin, Youngki ^{[2
]}

Park, Sangho ^{[2
]}

Khang, Yoonho ^{[2
]}

Hong, Seunghun ^{[1
,3
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Samsung Elect Co Ltd, Proc Dev Grp, Yongin 446711, Gyeonggi Do, South Korea

[3] Seoul Natl Univ, Dept Biophys & Chem Biol, WCU Program, Seoul 151747, South Korea

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 08期

关键词：

THIN-FILM TRANSISTORS; ALIGNED ARRAYS; RANDOM NETWORKS; LARGE-SCALE; TRANSPARENT; MOBILITY; FIELD; TRANSPORT; DENSITY;

D O I：

10.1088/0957-4484/23/8/085204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high source-drain voltage operation. At a high source-drain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small on-off ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher on-off ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays.

引用

页数：6

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