Development of P-doped SiO2 as proton exchange membrane for microfuel cells

被引：11

作者：

Bhusari, D ^{[1
]}

Li, J ^{[1
]}

Jayachandran, PJ ^{[1
]}

Moore, C ^{[1
]}

Kohl, PA ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 11期

关键词：

D O I：

10.1149/1.2050587

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Phosphorus-doped silicon dioxide (PSG) thin films with improved ionic conductivity were deposited via plasma-enhanced chemical vapor deposition for application as a thin-film proton exchange membrane (PEM) in microfabricated fuel cells. More than three orders of magnitude improvement in the ionic conductivity is obtained by P doping of low-temperature deposited SiO2. The area resistance of 3 mu m thick film of PSG is comparable to a 200 mu m thick film of Nafion. Application of these PSG films as PEM in microfuel cells yielded more than one order of magnitude improvement in power density compared to low-temperature, undoped SiO2 membranes. (c) 2005 The Electrochemical Society.

引用

页码：A588 / A591

页数：4

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