A Comprehensive Investigation of Dynamic Switching Performance for Press-pack IGBT Modules

被引：0
|
作者：
Chang, Yao [1 ]
Zhou, Yu [1 ]
Luo, Haoze [1 ]
Li, Wuhua [1 ]
He, Xiangning [1 ]
Zou, Dingchao [2 ]
Lin, Weixing [2 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] TBEA SUNOASIS CO LTD, Urumqi 830011, Xinjiang Provin, Peoples R China
来源：
2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年
关键词：
Insulated-Gate Bipolar Transistor (IGBT); Press-pack Modules; Double-pulse Test; Dynamic Switching Performance;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Recently developed press-pack IGBT (PPI) modules, which feature higher voltage rating, larger thermal capacity, faster switching speed and easy utilization in series, have become a serious competitor with solder plastic IGBT modules in the field of voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission systems. To give a comprehensive investigation of press-pack IGBT modules, a platform to test dynamic switching performance for press-pack IGBT modules is designed and implemented by employing the principle of double-pulse test in this paper. The effects of external parameters--DC-link voltage, load current and junction temperature on dynamic performance of press-pack IGBT modules are characterized in detail, and their relative variation mechanism for switching performance of press-pack IGBT is confirmed with experimental results and analyzed from the view of semiconductor physics.
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收藏
页数：9
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