Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

被引：4
|
作者：
Wang, Wei-Hsiang [1 ]
Heredia, Elica [1 ]
Lyu, Syue-Ru [1 ]
Liu, Shu-Hao [1 ]
Liao, Po-Yung [2 ]
Chang, Ting-Chang [2 ]
Jiang, Pei-hsun [1 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 02期
关键词：
Quantum interference; weak localization; weak antilocalization; IGZO; TFT; spintronics; MAGNETORESISTANCE; TRANSPORT; OXIDE;
D O I：
10.1109/LED.2017.2786547
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltagesof double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.
引用
收藏
页码：212 / 215
页数：4
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