A New InGaP/GaAs Tunneling Heterostructure-Emitter Bipolar Transistor (T-HEBT)

被引：4

作者：

Tsai, Jung Hui ^{[1
]}

Lee, Ching Sung ^{[2
]}

Lour, Wen Shiung ^{[3
]}

Ma, Yung Chun ^{[1
]}

Ye, Sheng Shiun ^{[1
]}

机构：

[1] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Taichung 100, Taiwan

[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung, Taiwan

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 05期

关键词：

OFFSET VOLTAGE; CURRENT GAIN; ALGAAS/GAAS; HBTS;

D O I：

10.1134/S1063782611050137

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz. DOI: 10.1134/S1063782611050137

引用

页码：646 / 649

页数：4

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