In doped ZnO thin films

被引：137
作者：
Hafdallah, A. [1 ]
Yanineb, F. [1 ]
Aida, M. S. [1 ]
Attaf, N. [1 ]
机构：
[1] Univ Mentouri Constantine, Dept Phys, Fac Sci, Lab Thin Films & Interface, Constantine 25000, Algeria
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 26期
关键词：
ZnO; Thin films; Ultrasonic spray; Semiconductor doping; ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; ELECTRICAL-PROPERTIES; TRANSPARENT; AL;
D O I：
10.1016/j.jallcom.2011.04.058
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnO thin films were deposited by ultrasonic spray technique, zinc acetate was used as starting solution with a molarity of 0.1 M. A set of indium (In) doped ZnO (between 2 and 8 wt%) thin films were grown on glass substrate at 350 degrees C. The present work is focused on the influence of the doping level on the structural, optical and electrical films properties. Optical film characterization was carried by using UV-visible transmission spectroscopy, the optical gap was deduced from absorption. From X ray diffraction (XRD) analysis, we have deduced that ZnO films are formed with nanocrystalline structure with preferential (0 0 2) orientation. The grain size is increased with In doping from 28 to 37 nm. Electrical characterization was achieved using two-probes coplanar structure, the measured conductivity varies from 2.3 to 5.9 Omega cm(-1) when increasing the doping level. However the optical gap is reduced from 3.4 to 3.1 eV. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：7267 / 7270
页数：4
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