Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory

被引：7
作者：
Chen, Jianhui [1 ]
Chen, Bingbing [1 ]
Shen, Yanjiao [1 ]
Guo, Jianxin [1 ]
Liu, Baoting [1 ]
Dai, Xiuhong [1 ]
Xu, Ying [1 ]
Mai, Yaohua [1 ,2 ]
机构：
[1] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China
[2] Jinan Univ, Coll Informat & Technol, Inst New Energy Technol, Guangzhou 510632, Guangdong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 19期
关键词：
NONVOLATILE MEMORY; SILICON; DENSITY;
D O I：
10.1063/1.4998000
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A hysteresis loop of minority carrier lifetime vs voltage is found in polystyrenesulfonate (PSS)/Si organic-inorganic hybrid heterojunctions, implying an interfacial memory effect. Capacitance-voltage and conductance-voltage hysteresis loops are observed and reveal a memory window. A switchable interface state, which can be controlled by charge transfer based on an electrochemical oxidation/deoxidation process, is suggested to be responsible for this hysteresis effect. We perform first-principle total-energy calculations on the influence of external electric fields and electrons or holes, which are injected into interface states on the adsorption energy of PSS on Si. It is demonstrated that the dependence of the interface adsorption energy difference on the electric field is the origin of this two-state switching. These results offer a concept of organic-inorganic hybrid interface memory being optically or electrically readable, low-cost, and compatible with the flexible organic electronics. Published by AIP Publishing.
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页数：4
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