The circuit with valley switching technique

被引：0

作者：

Sun, Liang ^{[1
]}

Chen, Si ^{[1
]}

Wu Xiaobo ^{[1
]}

Yan Xiaolong ^{[1
]}

机构：

[1] Zhejiang Univ, Inst VLSI Design, Hangzhou 310027, Peoples R China

来源：

EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To implement soft switching in power management integrated circuit, a valley switching technique was proposed in this paper. Valley switching technique can significantly reduce the switching losses by discharging the parasitical capacitor across MOSFET before the switch is turned on. In order to improve the precision of valley detection, a principle of modulating hysteretic window was proposed to reduce the delay. The practical circuit was analyzed and simulated to verify this approach. The results showed that the performance of the circuit is consistent with expectations well.

引用

页码：941 / 943

页数：3