Graphene with different oxygenated levels in transparent resistive switching memory applications

被引：1
作者：
Lin, Chun-Chieh [1 ]
Tsai, Shuo-Wen [1 ]
Zeng, Zih-Lun [1 ]
机构：
[1] Natl Dong Hwa Univ, Dept Elect Engn, Hualien 97401, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期
关键词：
DEVICE; OXIDE;
D O I：
10.7567/JJAP.56.04CP05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Graphene oxide (GO) is a two-dimensional material with a high light transmittance. The conductivity of GO can be altered by applying an electrical signal, which can be used in nonvolatile resistive switching memories. In this work, the effects of the GO oxygenated level on resistive switching properties are studied. The GO-based device with a higher oxygenated level exhibits better resistive switching properties. The transmittance of the GO-based device is demonstrated. A possible resistive switching model and band diagrams of the GO-based device are also proposed. The reported GO-based resistive switching memory device can possibly be used in new-generation nonvolatile memory and transparent devices. (C) 2017 The Japan Society of Applied Physics
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页数：4
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