A Compact Plasmonic MOS-based Electro-optic Switch

被引：0
|
作者：
Ye, Chenran [1 ]
Li, Zhuoran [1 ]
Soref, Richard [2 ]
Sorger, Volker J. [1 ]
机构：
[1] George Washington Univ, Dept Elect & Comp Engn, Washington, DC 20052 USA
[2] Univ Massachusetts, Coll Sci & Engn, Boston, MA 02125 USA
来源：
2013 IEEE INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP) | 2013年
关键词：
electro-optic switch; silicon-on-insulator; plasmonic; MOS; light-matter-interaction; WAVE-GUIDES; SPLITTER; COUPLER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on a three-waveguide electro-optic switch for ultra-compact photonic integrated circuits and data routing. The device features a plasmonic MOS mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, Indium-Tin-Oxide (ITO), is altered via shifting the plasma frequency due to carrier modulation inside this waveguide-based MOS design. This modulation controls the transmission direction of TM polarized light into either a CROSS or BAR waveguide port. For a tolerable insertion loss of 3 (8) dB, the switch provides a cross-to-bar state discrimination of 4 (10) times. The device can be integrated into a Silicon-on-Insulator platform to keep manufacturing costs low.
引用
收藏
页码：218 / 220
页数：3
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