In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

被引：14

作者：

Liu, YC ^{[1
]}

Furukawa, K ^{[1
]}

Gao, DW ^{[1
]}

Nakashima, H ^{[1
]}

Uchino, K ^{[1
]}

Muraoka, K ^{[1
]}

机构：

[1] KYUSHU UNIV,DEPT ENERGY CONVERS ENGN,KASUGA,FUKUOKA 816,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 121卷

关键词：

D O I：

10.1016/S0169-4332(97)00295-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-SixNy films and nitrogen gas fraction relative to (N-2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-SixNy/Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness. (C) 1997 Elsevier Science B.V.

引用

页码：233 / 236

页数：4

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