Characteristics of ultra-low-energy Cs+ ion beam bombardments

被引：6

作者：

Li, ZP ^{[1
]}

Hoshi, T ^{[1
]}

Oiwa, R ^{[1
]}

机构：

[1] ULVAC PHI Inc, Chigasaki, Kanagawa 253, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 203卷

关键词：

shallow implants; depth resolution; scale distortion; useful yield; delta-doped B; ultra-low-energy probe;

D O I：

10.1016/S0169-4332(02)00669-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Shallow arsenic implants and extra-thin film (SiON) are routinely analyzed by modem SIMS under ultra-low-energy Cs+ ion beam bombardment, either at oblique (<60degrees) or glancing (similar to80degrees) incident angle [J. Surf. Anal. 6 (3) (1999) A-3; in: A. Benninghoven, et al. (Eds.), Proceedings of the SIMS XII, Elsevier, Amsterdam, 1999, p. 549]. This article investigates the basic aspects of ultra-low-energy Cs+ ion beam bombardment using a delta-doped boron sample (four layers, 5.3 nm per cycle), such as useful yield, depth resolution and changes in sputter rate in the near surface region. Our results indicated that there is a magic incidence angle (similar to70degrees) at which the depth resolution is very poor, and at glancing (similar to80degrees) incident angle the best depth resolution is observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：323 / 328

页数：6

共 5 条

[1] Hoshi T., 1999, P SIMS 12 AMST, P549
[2] KATAOKA Y, 2001, P ULTR SHALL JUNCT 2
[3] LI Z, 1999, J SURF ANAL A, V6, P3
[4] Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis
Magee, CW
Jacobson, D
Gossmann, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 489 - 492
[5] Depth scale distortions in shallow implant secondary ion mass spectrometry profiles
Schueler, BW
Reich, DF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 496 - 500

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