Research on GaN-Based RF Devices: High-Frequency Gate Structure Design, Submicrometer-Length Gate Fabrication, Suppressed SCE, Low Parasitic Resistance, Minimized Current Collapse, and Lower Gate Leakage

被引：10

作者：

Hao, Yue ^{[1
]}

Ma, Xiaohua ^{[1
]}

Mi, Minhan ^{[1
]}

Yang, Lin-An ^{[1
]}

机构：

[1] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Sch Microelect, Xian 710071, Peoples R China

来源：

IEEE MICROWAVE MAGAZINE | 2021年 / 22卷 / 04期

基金：

中国博士后科学基金; 国家重点研发计划; 中国国家自然科学基金;

关键词：

Radio frequency; Wireless communication; Traveling wave tubes; Logic gates; HEMTs; Vacuum electronics; MODFETs; ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN HEMTS; OHMIC CONTACTS; PERFORMANCE; INTERFACE; OPERATION; GANHEMTS;

D O I：

10.1109/MMM.2020.3047746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As an important part of wireless communication systems, the technology of RF devices and circuits has been progressing rapidly. For high-frequency and high-power applications, vacuum electronic devices (e.g., traveling wave tubes) have been widely used, although the vacuum tube is large in size and hard to integrate.

引用

页码：34 / 48

页数：15