Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

被引：20

作者：

Xia, Zhihe ^{[1
]}

Lu, Lei ^{[1
]}

Li, Jiapeng ^{[1
]}

Feng, Zhuoqun ^{[1
]}

Deng, Sunbin ^{[1
]}

Wang, Sisi ^{[1
]}

Kwok, Hoi Sing ^{[1
]}

Wong, Man ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 07期

关键词：

Indium-tin-zinc oxide (ITZO); thin-film transistors (TFTs); low off-state current; elevated-metal;

D O I：

10.1109/LED.2017.2707090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the distinct effects of oxidizing thermal annealing on the properties of zinc oxide and indium-gallium-zinc oxide (IGZO) under covers of different gas-permeabilities, the elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) architecture has been proposed and demonstrated using IGZO as the channel material. However, the speculation that the EMMO architecture is more generally applicable to semiconducting metal oxides other than IGZO has yet to be verified. Presently reported is an EMMO TFT with a modified structure employing indium-tin-zinc oxide as the channel material. The resulting TFT exhibited good performance metrics: a relatively higher field-effect mobility of 23.2 +/- 0.8 cm(2)/Vs, an ON/OFF current ratio of at least 3.1 x 10(10), a pseudo subthreshold slope of 165 +/- 15mV/decade, a width-normalized OFF-state current of at most 8.1 x 10(-19)A/mu m, and robust stability against gate-bias stress.

引用

页码：894 / 897

页数：4

共 20 条

[1] Arai T., 2011, PROC SID DIGEST, P710, DOI DOI 10.1889/1.3621424
[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
Carcia, PF
McLean, RS
Reilly, MH
Nunes, G
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (07) : 1117 - 1119
[3] Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor
Du Ahn, Byung
Lim, Jun Hyung
Cho, Mann-Ho
Park, Jin-Seong
Chung, Kwun-Bum
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (41)
[4] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS
FAN, JCC
GOODENOUGH, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3524 - 3531
[5] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
Fortunato, E.
Barquinha, P.
Martins, R.
[J]. ADVANCED MATERIALS, 2012, 24 (22) : 2945 - 2986
[6] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Fortunato, EMC
Barquinha, PMC
Pimentel, ACMBG
Gonçalves, AMF
Marques, AJS
Martins, RFP
Pereira, LMN
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (13) : 2541 - 2543
[7] Hosono H, 1996, J NON-CRYST SOLIDS, V200, P165, DOI 10.1016/0022-3093(96)80019-6
[8] Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility
Jiang, Qingjun
Lu, Jianguo
Cheng, Jipeng
Li, Xifeng
Sun, Rujie
Feng, Lisha
Dai, Wen
Yan, Weichao
Ye, Zhizhen
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (13)
[9] Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium-Gallium-Zinc Oxide
Kato, Kiyoshi
Shionoiri, Yutaka
Sekine, Yusuke
Furutani, Kazuma
Hatano, Takehisa
Aoki, Taro
Sasaki, Miyuki
Tomatsu, Hiroyuki
Koyama, Jun
Yamazaki, Sunpei
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[10] Lu L., 2016, IEDM, DOI 10.1109/IEDM.2016.7838526

← 1 2 →