Removal of oxygen atoms from a SiO2 surface by incoherent vacuum ultraviolet excimer irradiation

被引：21

作者：

Ohtsubo, T

Azuma, T

Takaura, M

Higashiguchi, T

Kubodera, S

Sasaki, W

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

[2] Miyazaki Univ, Photon Sci Ctr, Miyazaki 8892192, Japan

[3] Nano Tech Photon Inc, Miyazaki 8891404, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 02期

关键词：

D O I：

10.1007/s00339-002-1458-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated the non-thermal removal of oxygen atoms from an oxidized silicon surface (SiO2) on a silicon wafer by the use of a low-power (0.3 mW cm(-2)) incoherent vacuum ultraviolet (VUV) light source at 126 nm. X-ray photoelectron spectroscopy (XPS) has shown that a maximum Si concentration of 80% appears at the surface after a 20-h irradiation with 9.8 eV photons, as a result of oxygen removal from the SiO2 matrix. The surface morphology, however, indicates no damage or melting on the surface even after the irradiation.

引用

页码：139 / 141

页数：3

共 8 条

[1] ROLE OF HYDROGEN IN SYNCHROTRON-RADIATION-STIMULATED EVAPORATION OF AMORPHOUS SIO2 AND MICROCRYSTALLINE SI [J].