Surface potential relaxation of ferroelectric domain investigated by Kelvin probe force microscopy

被引:7
作者
Kim, Jiyoon
Kim, Yunseok
No, Kwangsoo
Buhlmann, Simon
Hong, Seungbum
Nam, Yun-Woo
Kim, Seung-Hyun
机构
[1] Korea Adv Inst Sci & Technol, Electron & Opt Mat Lab, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Samsung Adv Inst Technol, Nano Devices Lab, Yongin, Gyeonggi Do, South Korea
[3] Inostek Inc, Ansan 425791, Gyeonggi Do, South Korea
关键词
ferroelectric thin film; KFM; surface potential relaxation; grounded tip effect; ferroelectric domain;
D O I
10.1080/10584580601085552
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We attempted to investigate the surface potential relaxation of ferroelectric thin film domain by using Kelvin probe force microscopy (KFM). To avoid charge suction phenomenon by a grounded tip, the offset voltage was applied to the base line of the pulse trace. It was found that the surface potential contrast decreased in terms of elapsed time. Spreading a charge around domain makes the surface potential contrast decrease. Coulomb force repulsion and retention loss contributed to the spreading of surface charges on the ferroelectric domain. These results help us understand surface potential relaxation of nanoscale ferroelectric domains.
引用
收藏
页码:25 / 30
页数:6
相关论文
共 8 条
[1]   Surface potential of ferroelectric thin films investigated by scanning probe microscopy [J].
Chen, XQ ;
Yamada, H ;
Horiuchi, T ;
Matsushige, K ;
Watanabe, S ;
Kawai, M ;
Weiss, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :1930-1934
[2]   LOCAL POLING OF FERROELECTRIC POLYMERS BY SCANNING FORCE MICROSCOPY [J].
GUTHNER, P ;
DRANSFELD, K .
APPLIED PHYSICS LETTERS, 1992, 61 (09) :1137-1139
[3]   Ferroelectric properties of very thin Pb(Zr0.4Ti0.6)O3 film determined by Kelvin force microscope [J].
Jang, DM ;
Heo, J ;
Yi, IS ;
Chung, IS .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :6739-6742
[4]  
Kim Y, UNPUB
[5]  
KIM Y, 2006, IN PRESS J ELETROCER
[6]   Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr0.2Ti0.8)O3 thin films [J].
Paruch, P ;
Tybell, T ;
Triscone, JM .
APPLIED PHYSICS LETTERS, 2001, 79 (04) :530-532
[7]  
SHIN H, 1999, SPIE, V3675, P277
[8]   Kelvin probe force microscopy study of SrBi2Ta2O9 and PbZr0.53Ti0.47O3 thin films for high-density nonvolatile storage devices [J].
Son, JY ;
Bang, SH ;
Cho, JH .
APPLIED PHYSICS LETTERS, 2003, 82 (20) :3505-3507