Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

被引：6

作者：

Liu, Yi-Jung ^{[1
]}

Yen, Chih-Hung ^{[1
]}

Hsu, Chia-Hao ^{[1
]}

Yu, Kuo-Hui ^{[1
]}

Chen, Li-Yang ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

OPTICAL REVIEW | 2009年 / 16卷 / 06期

关键词：

GaN; light-emitting diode (LED); In2O3; ITO; specific contact resistance; transparent and conductive oxide (TCO); P-TYPE GAN; OHMIC CONTACTS; LOW-RESISTANCE; PERFORMANCE; EFFICIENCY; FILMS; LEDS;

D O I：

10.1007/s10043-009-0113-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In2O3)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In2O3 layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In2O3 layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.

引用

页码：575 / 577

页数：3

共 18 条

[1] Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure [J].

Chang, KM ;

Chu, JY ;

Cheng, CC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (08) :1807-1809

[2] THE GROWTH AND PROPERTIES OF HIGH-PERFORMANCE ALGALNP EMITTERS USING A LATTICE MISMATCHED GAP WINDOW LAYER [J].

FLETCHER, RM ;

KUO, CP ;

OSENTOWSKI, TD ;

HUANG, KH ;

CRAFORD, MG ;

ROBBINS, VM .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) :1125-1130

[3] Current crowding in GaN/InGaN light emitting diodes on insulating substrates [J].

Guo, X ;

Schubert, EF .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4191-4195

[4] Low-resistance ohmic contacts to p-type GaN [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Chen, CY ;

Shih, KK .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1275-1277

[5] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN [J].

Horng, RH ;

Wuu, DS ;

Lien, YC ;

Lan, WH .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2925-2927

[6] Optical and electrical properties of GaN micron-scale light-emitting diode [J].

Hwang, Jung-Min ;

Lee, Kuan-Feng ;

Hwang, Huey-Liang .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) :752-758

[7] Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice [J].

Jang, Ja-Soon ;

Kim, Donghwan ;

Seong, Tae-Yeon .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (13-16) :1536-1538

[8] Effect of film thickness on the properties of indium tin oxide thin films [J].

Kim, H ;

Horwitz, JS ;

Kushto, G ;

Piqué, A ;

Kafafi, ZH ;

Gilmore, CM ;

Chrisey, DB .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :6021-6025

[9] Consideration of the actual current-spreading length of GaN-based light-emitting diodes for high-efficiency design [J].

Kim, Hyunsoo ;

Cho, Jaehee ;

Lee, Jeong Wook ;

Yoon, Sukho ;

Kim, Hyungkun ;

Sone, Cheolsoo ;

Park, Yongjo ;

Seong, Tae-Yeon .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (7-8) :625-632

[10] The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine interfaces [J].

Lee, Hyunbok ;

Cho, Sang Wan ;

Han, Kyul ;

Jeon, Pyung Eun ;

Whang, Chung-Nam ;

Jeong, Kwangho ;

Cho, Kwanghee ;

Yi, Yeonjin .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

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