High temperature implantation of aluminum in 4H silicon carbide

被引：0

作者：

Rambach, M. ^{[1
]}

Bauer, A. J. ^{[2
]}

Ryssel, H. ^{[1
,2
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Elektron Baulemente, Cauerstr 6, D-91058 Erlangen, Germany

[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷

关键词：

aluminum; high temperature implantation; mobility; silicon carbide;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of implantation temperature on the resistivity of aluminum implanted 4H-silicon carbide was determined. A dose of 1.2(.)10(15) cm(-2) aluminum ions was implanted at temperatures between room temperature and 1000 degrees C. A decrease of resistivity down to 0.35 Omega cm was found with increasing implantation temperature. The influence of implantation temperature on resistivity was identified by modeling temperature dependent resistivity data. The results showed an increase of mobility due to the lowering of compensating centers.

引用

页码：287 / +

页数：2

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