On Structural and Electrical Characterization of n-ZnO/p-Si Single Heterojunction Solar Cell

被引：0

作者：

Hussain, Babar ^{[1
,2
]}

Ali, Adnan ^{[3
]}

Unsur, Veysel ^{[1
]}

Ebong, Abasifreke ^{[1
]}

机构：

[1] Univ North Carolina Charlotte, Dept Elect & Comp Engn, Energy Prod & Infrastruct Ctr, Charlotte, NC 28223 USA

[2] Natl Inst Lasers & Optron, Islamabad 45650, Pakistan

[3] Univ Faisalabad, Dept Phys, Govt Coll, Faisalabad 38000, Punjab, Pakistan

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

Zinc oxide; silicon; solar cell; heterojunction; structural characterization; ZINC-OXIDE; GROWTH;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report structural and electrical characterizations of zinc oxide films grown on sapphire and silicon substrates. The zinc oxide works as an active n-layer of a heterojunction solar cell as well as antireflection coating. The deposition parameters of zinc oxide have been optimized using RF sputtering. The x-ray diffraction and scanning electron microscopy confirm that optimized deposition temperature and RF power are >300 degrees C and 180 W respectively. The films grown on textured silicon substrates have lower crystallinity as compared to those grown on sapphire. The pn junction formation between zinc oxide and silicon has been confirmed by current-voltage and suns-VOC measurements. The initial solar cell device has been fabricated using silver as front and aluminum as back contact.

引用

页码：1898 / 1901

页数：4

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