Effect of MnCO3 on Eliminating Al2TiO5 Phase and Dielectric Properties of 0.90Al2O3-0.10TiO2 Composite Ceramics

被引：2

作者：

Lu, Xiaochi ^{[1
,2
]}

Bian, Wenjie ^{[1
,2
]}

Li, Yaoyao ^{[1
,2
]}

Fu, Zhenxiao ^{[3
]}

Wang, Zhefei ^{[2
,4
]}

Zhu, Haikui ^{[1
,2
]}

Zhang, Qitu ^{[1
,2
]}

机构：

[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Jiangsu, Peoples R China

[2] Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct, Nanjing 210009, Jiangsu, Peoples R China

[3] Fenghua Adv Technol Holding Co Ltd, Zhaoqing 526000, Peoples R China

[4] Changshu Inst Technol, Coll Chem & Mat Engn, Changshu 215500, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 08期

关键词：

Microwave dielectric ceramics; millimeter-wave applications; high Q x f; low epsilon(r); zero tau(f); Al2O3-TiO2; MICROWAVE APPLICATIONS; SINTERED ALUMINA; ALPHA-ALUMINA; DENSIFICATION; RESONATORS; BEHAVIOR; SYSTEM; TIO2; ZNO;

D O I：

10.1007/s11664-017-5470-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 0.90Al(2)O(3)-0.10TiO(2) ceramics have been prepared by the conventional solid-state method. MnCO3 was added into the ceramic system for the purpose of eliminating Al2TiO5 and improving the microwave dielectric performance. For the samples of MnCO3 addition, once the sintering temperature was over 1200A degrees C, the Al2TiO5 phase was suppressed without annealing treatment. In combination with scanning electron microscope (SEM) micrographs, the optimized sintering temperature for the ceramics system was 1250A degrees C. The grain size increased with the increasing of MnCO3 addition, accompanied with the abnormal grain growth. Moreover, the energy dispersive spectrometer (EDS) data illustrate that the Mn element exists at the grain boundary. The compact uniform microstructure and excellent microwave dielectric performance were obtained in the samples of 0.90Al(2)O(3)-0.10TiO(2) with 0.3 mol.% MnCO3 sintered at 1250A degrees C for 4 h: epsilon (r) = 12.6, Q x f = 125500 GHz, tau (f) = -1.4 ppm/A degrees C.

引用

页码：4924 / 4930

页数：7

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