Local structures around Er atoms in GaAs:Er,O studied by fluorescence EXAFS and photoluminescence

被引：13

作者：

Ofuchi, H

Kubo, T

Tabuchi, M

Takahei, K

Takeda, Y

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 51-2卷

关键词：

extended X-ray absorption fine structure; erbium; Co-doping; local structure; GaAs;

D O I：

10.1016/S0167-9317(99)00535-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated Er- and O-doped GaAs samples by fluorescence extended X-ray absorption fine structure (EXAFS) measurements in order to clarify the local structures around the Er atoms. The EXAFS analysis revealed that in the range of Er concentration from 2 X 10(18) cm(-3) to 3 X 10(20) cm(-3) the majority of the Er atoms substituted Ga sublattice with two adjacent oxygen atoms (Er-2O center). On the contrary, in the same range of the Er concentration the PL intensity decreased rapidly with the increase of the Er concentration. The EXAFS analysis also indicated that the averaged arrangements of second or third neighbor atoms are different in each sample. Therefore, the Er-2O centers are considered to be further modified by the local structures of those second and even third nearest neighbors, which in turn change their optical characteristics. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：715 / 721

页数：7

共 19 条

[1]

COFFA S, 1996, MAT RES SOC S P, V422

[2]

Fujiwara Y, 1996, INST PHYS CONF SER, V145, P149

[3] Erbium doping to P-based III-V semiconductors by OMVPE with TBP as a non-toxic P source [J].

Fujiwara, Y ;

Ito, Y ;

Nonogaki, Y ;

Matsubara, N ;

Fujita, K ;

Takeda, Y .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :621-625

[4] Effects of growth temperature on Er-related photoluminescence in Er-doped InP and GaAs grown by organometallic vapor phase epitaxy with tertiarybutylphosphine and tertiarybutylarsine [J].

Fujiwara, Y ;

Matsubara, N ;

Tsuchiya, J ;

Ito, T ;

Takeda, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2587-2591

[5] Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy [J].

Fujiwara, Y ;

Curtis, AP ;

Stillman, GE ;

Matsubara, N ;

Takeda, Y .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4902-4908

[6]

FUJIWARA Y, 1999, JPN J APPL PHYS, V28, P1060

[7]

FUJIWARA Y, 1997, I PHYS C SER, V156, P199

[8] EXTENDED X-RAY ABSORPTION FINE-STRUCTURE - ITS STRENGTHS AND LIMITATIONS AS A STRUCTURAL TOOL [J].

LEE, PA ;

CITRIN, PH ;

EISENBERGER, P ;

KINCAID, BM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (04) :769-806

[9]

NOMURA M, 1996, 9515 KEK

[10] Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS [J].

Ofuchi, H ;

Kawamura, D ;

Tsuchiya, J ;

Matsubara, N ;

Tabuchi, M ;

Fujiwara, Y ;

Takeda, Y .

JOURNAL OF SYNCHROTRON RADIATION, 1998, 5 :1061-1063

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